View TGA2512-2-SM_872311.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com -30 -20 -10 0 10 20 30 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) spar & nf (db) 0 1 2 3 4 5 6 noise fi g ure ( db ) -30 -20 -10 0 10 20 30 4 5 6 7 8 9 10 11 12 13 14 frequency (ghz) spar & nf (db) 0 1 2 3 4 5 6 noise figure (db) product description the triquint tga2512-sm is a packaged x- band balanced lna with agc amplifier for ew, ecm, and radar receiver or driver amplifier applications. the tga2512-sm provides excellent noise performance with typical midband nf of 2.3db, and high gain, 25db from 4-14ghz the tga2512-sm is designed for maximum ease of use. tga2512-sm can handle up to 21dbm input power reliably, while the build-in gain control provides 15db of typical gain control range. the part can be used in self- biased mode, with a single +5v supply connection, or in gate biased mode, allowing the user to control the current for a particular application. in self-biased mode the tga2512-sm achieves 6dbm typical p1db, while in gate-biased mode the typical p1db is over 13dbm. lead-free & rohs compliant. evaluation boards are available. primary applications ? x-band radar ? ew, ecm ? point-to-point radio measured data orl gain irl key features ? typical frequency range: 4 - 14 ghz ? 2.3 db nominal noise figure ? 25 db nominal gain ? 15 db agc range ? 13 dbm nominal p1db ? 24dbm nominal oip3 ? bias: 5 v, 160 ma gate bias 5 v, 90 ma self bias ? package dimensions: 4.0 x 4.0 x 0.9 mm bias conditions: gate bias, vd = 5v, id = 160ma bias conditions: self bias, vd = 5v, id = 90ma nf gain nf orl irl self bias gate bias datasheet subject to change without noitce 4 - 14 ghz balanced lna
2 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes vd drain voltage [3.5 + (0.0125)(id)] v 2 / 3 / vg gate voltage range -1 to +0.5 v id drain current (gate biased) 240 ma 2 / ? ig ? gate current 7.04 ma p in input continuous wave power 21 dbm p d power dissipation 1.56 w 2 / 4 / t ch operating channel temperature 200 c 5/ mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / unit for id is ma 4 / when operated at this bias condition with a base plate temperature of 85 c, the median life is 9.3e4 hours. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii electrical characteristics (ta = 25 0 c, nominal) parameter gate bias self bias units frequency range 4 - 14 4 - 14 ghz drain voltage, vd 5.0 5.0 v drain current, id 160 90 ma gate voltage, vg -0.1 - v small signal gain, s21 25 22 db input return loss, s11 10 10 db output return loss, s22 20 20 db noise figure, nf 2.3 2.3 db output power @ 1db gain compression, p1db 13 6 dbm oip3 24 16 dbm temperature gain coefficent -0.02 -0.02 db/c note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements.
4 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii thermal information parameter test conditions t ch (c) jc (c/w) t m (hrs) jc thermal resistance (channel to case) vd = 5 v id = 160 ma gate bias pdiss = 0.80 w 115 37.6 1.3e+6 jc thermal resistance (channel to case) vd = 5 v id = 90 ma self bias pdiss = 0.45 w 97.7 28.2 7.2e+6 note: worst case condition with no rf applied, 100% of dc power is dissipated, case temperature at 85 c median lifetime (tm) vs. channel temperature
5 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: self bias , vd = 5 v, id = 90 ma 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) gain (db) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 2 3 4 5 6 7 8 9 101112131415161718 frequency (ghz) gain over vctrl (db) vctrl=0.0v vctrl=2.5v vctrl=2.75v vctrl=3.0v vctrl=3.25v vctrl=3.5v vctrl=3.75v vctrl=4.0v vctrl=4.25v vctrl=4.5v vctrl=5.0v
6 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: self bias , vd = 5 v, id = 90 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) input return loss (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) output return loss (db)
7 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: self bias , vd = 5 v, id = 90 ma 0 1 2 3 4 5 6 7 8 9 10 23456789101112131415161718 frequency (ghz) noise figure (db) 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 101112131415161718 frequency (ghz) noise figure over vctrl (db) vctrl=0v vctrl=2.5v vctrl=2.75v vctrl=3.0v vctrl=3.5v vctrl=4.0v vctrl=5.0v
8 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: self bias , vd = 5 v, id = 90 ma 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) p1db (dbm) -15 -12 -9 -6 -3 0 3 6 9 12 15 23456789101112131415161718 frequency (ghz) p1db over vctrl (dbm) vctrl=0v vctrl=2v vctrl=3v vctrl=3.5v vctrl=4v vctrl=5v
9 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: self bias , vd = 5 v, id = 90 ma 8 10 12 14 16 18 20 22 24 26 56789101112131415 frequency (ghz) oip3 (dbm)
10 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: gate bias , vd = 5 v, id = 160 ma 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 2 3 4 5 6 7 8 9 101112131415161718 frequency (ghz) gain (db) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 23456789101112131415161718 frequency (ghz) gain over vctrl (db) vctrl=0v vctrl=1v vctrl=2v vctrl=3v vctrl=4v vctrl=5v
11 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: gate bias , vd = 5 v, id = 160 ma -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 23456789101112131415161718 frequency (ghz) input return loss (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 23456789101112131415161718 frequency (ghz) output return loss (db)
12 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: gate bias , vd = 5 v, id = 160 ma 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 101112131415161718 frequency (ghz) noise figure (db) 0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) noise figure over vctrl (db) vctrl=0v vctrl=2.5v vctrl=2.75v vctrl=3.0v vctrl=3.5v vctrl=4.0v vctrl=5.0v
13 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: gate bias , vd = 5 v, id = 160 ma 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) p1db (dbm) -15 -12 -9 -6 -3 0 3 6 9 12 15 23456789101112131415161718 frequency (ghz) p1db over vctrl (dbm) vctrl=0v vctrl=2v vctrl=3v vctrl=3.5v vctrl=4v vctrl=5v
14 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: gate bias , vd = 5 v, id = 160 ma 8 10 12 14 16 18 20 22 24 26 5 6 7 8 9 101112131415 frequency (ghz) oip3 (dbm)
15 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout diagram bottom view top view dot indicates pin 1 pin description 1,3, 4, 5, 6, 7, 9 nc 2 rf input 8r f o u t p u t 10 vd 11 vctrl 12 vg 13 gnd 11 12 13 10 9 8 7 6 5 4 3 2 1 self bias gate bias pin description 1,3, 4, 5, 6, 7, 9, 12 nc 2r f i n p u t 8r f o u t p u t 10 vd 11 vctrl 13 gnd self bias: vd = 5v (id = ~90ma), vctrl = 0 to +5v for gain adjustment gate bias: vd = 5v , vctrl = 0 to +5v for gain adjustment vg = range, -0.5 to 0, typically ~ -0.1 will provide ~160ma of id.
16 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. units: millimeters. package tolerance: +/- 0.10 bottom view .33 .62 .65 4.00 1.35 .95 .95 3.05 4.00 2.1 x 2.1mm ground pad 1 2 3 4 5 6 7 8 9 10 11 12 13
17 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended board layout assembly self bias 100pf 0402 case size
18 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended board layout assembly gate bias 100pf 0402 case size
19 tga2512-sm may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com ordering information part package style tga2512-1-sm qfn 4x4 surface mount ? self bias TGA2512-2-SM qfn 4x4 surface mount ? gate bias

▲Up To Search▲

Price & Availability of TGA2512-2-SM

	To Download TGA2512-2-SM Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .